BSC039N06NSATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 19A/100A TDSON
$2.18
Available to order
Reference Price (USD)
5,000+
$0.85986
10,000+
$0.84182
Exquisite packaging
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| EMS | 3-7 days |
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BSC039N06NSATMA1
$2.18
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 36µA
- Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-6
- Package / Case: 8-PowerTDFN
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