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BSC018NE2LSATMA1

Infineon Technologies
BSC018NE2LSATMA1 Preview
Infineon Technologies
MOSFET N-CH 25V 29A/100A TDSON
$1.68
Available to order
Reference Price (USD)
5,000+
$0.56691
Exquisite packaging
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EMS 3-7 days

Infineon Technologies BSC018NE2LSATMA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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BSC018NE2LSATMA1

BSC018NE2LSATMA1

$1.68

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25 V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 12 V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-1
  • Package / Case: 8-PowerTDFN

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