Shopping cart

Subtotal: $0.00

BG3130RE6327BTSA1

Infineon Technologies
BG3130RE6327BTSA1 Preview
Infineon Technologies
MOSFET N-CH DUAL 8V SOT-363
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Infineon Technologies BG3130RE6327BTSA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
BG3130RE6327BTSA1

BG3130RE6327BTSA1

$0.00

Product details

Enhance your RF circuitry with the BG3130RE6327BTSA1 RF MOSFET transistor from Infineon Technologies, a standout in the discrete semiconductor products market. This transistor is specifically designed for high-frequency applications, offering unmatched performance and reliability. The BG3130RE6327BTSA1 features advanced FET technology that ensures low noise and high gain, critical for sensitive RF systems. Its efficient power handling capabilities make it suitable for both transmitting and receiving applications. The transistor's robust design guarantees long-term stability and durability. With excellent thermal characteristics, the BG3130RE6327BTSA1 maintains performance even under continuous operation. Its compact form factor allows for seamless integration into space-constrained designs. The BG3130RE6327BTSA1 is perfect for applications requiring precise signal amplification and control. Key benefits include superior switching speed, minimal signal loss, and high impedance matching. These features make it ideal for use in telecommunications infrastructure, satellite communication systems, and military-grade electronics. Additionally, it is well-suited for IoT devices, test and measurement equipment, and aerospace applications. The BG3130RE6327BTSA1 delivers consistent results across diverse operating environments. Engineers can rely on its precision and efficiency for critical RF tasks. Infineon Technologies has engineered this MOSFET to meet the highest industry standards. For projects demanding top-tier RF performance, the BG3130RE6327BTSA1 is an excellent choice. Don't miss the opportunity to incorporate this high-quality transistor into your designs. Visit our website to request a quote or submit an inquiry today. Experience the difference with the BG3130RE6327BTSA1 from Infineon Technologies.

General specs

  • Product Status: Obsolete
  • Transistor Type: 2 N-Channel (Dual)
  • Frequency: 800MHz
  • Gain: 24dB
  • Voltage - Test: 5 V
  • Current Rating (Amps): 25mA
  • Noise Figure: 1.3dB
  • Current - Test: 14 mA
  • Power - Output: -
  • Voltage - Rated: 8 V
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-PO

Viewed products

onsemi

2N5952_D75Z

$0.00 (not set)
STMicroelectronics

LET9150

$0.00 (not set)
Ampleon USA Inc.

BLA6G1011-200R,112

$0.00 (not set)
CEL

NE3513M04-A

$0.00 (not set)
STMicroelectronics

LET16060C

$0.00 (not set)
Infineon Technologies

PTFA210701EV4XWSA1

$0.00 (not set)
NXP USA Inc.

MRF6S9125NR1

$0.00 (not set)
Ampleon USA Inc.

BLF988,112

$0.00 (not set)
NXP USA Inc.

MMRF1024HSR5

$0.00 (not set)
Ampleon USA Inc.

BLA0912-250R,112

$0.00 (not set)
Top