BFR193WH6327XTSA1
Infineon Technologies
Infineon Technologies
RF TRANS NPN 12V 8GHZ SOT323-3
$0.50
Available to order
Reference Price (USD)
3,000+
$0.09512
6,000+
$0.09034
15,000+
$0.08317
30,000+
$0.07839
75,000+
$0.07122
150,000+
$0.06883
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Infineon Technologies BFR193WH6327XTSA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
BFR193WH6327XTSA1
$0.50
Product details
Discover unparalleled RF performance with Infineon Technologies's BFR193WH6327XTSA1 bipolar junction transistor, a standout in discrete semiconductor solutions. This BJT features exceptional high-frequency response characteristics, making it perfect for sensitive signal detection and amplification circuits. The transistor's optimized base-emitter junction design ensures low noise operation while delivering substantial power gain. Its robust construction withstands mechanical stress and thermal cycling common in field deployments. The BFR193WH6327XTSA1 demonstrates excellent intermodulation distortion characteristics for clean signal reproduction. Telecommunications equipment manufacturers utilize this component in fiber optic network repeaters and microwave backhaul systems. Aerospace applications include flight communication systems and terrain-following radar implementations. In scientific research, it enables precise signal processing in nuclear magnetic resonance (NMR) spectrometers and electron microscopy controls. The consumer electronics sector benefits from its reliable performance in smart antenna systems and millimeter-wave devices. With multiple packaging options available, the BFR193WH6327XTSA1 adapts to various PCB layout requirements and thermal management schemes. Infineon Technologies supports this product with comprehensive reliability data and failure mode analysis reports. Design teams can leverage our application engineering expertise for custom circuit optimization advice. Explore sample availability and lead time information through our online portal. Submit your project specifications today to receive a competitive quote for the BFR193WH6327XTSA1 RF transistor solution.
General specs
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
- Gain: 10.5dB ~ 16dB
- Power - Max: 580mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
- Current - Collector (Ic) (Max): 80mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323
Viewed products
