Shopping cart

Subtotal: $0.00

BFR193WH6327

Infineon Technologies
BFR193WH6327 Preview
Infineon Technologies
HIGH LINEARITY TRANSISTOR
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Infineon Technologies BFR193WH6327 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
BFR193WH6327

BFR193WH6327

$0.00

Product details

Infineon Technologies presents the BFR193WH6327 a high-reliability RF BJT transistor engineered for critical discrete semiconductor applications. This bipolar junction transistor delivers superior phase linearity and dynamic range performance essential for modern communication systems. Its advanced epitaxial base structure minimizes transit time effects while maintaining excellent current handling capacity. The product features a gold metallization system for optimal contact reliability and corrosion resistance. Engineers will appreciate the well-defined S-parameters and consistent high-frequency characteristics across production lots. Primary implementations include military-grade encrypted communication devices and electronic warfare systems. Commercial applications span point-to-point radio links and cellular small cell infrastructure deployments. In the medical field, it enables precise signal generation in therapeutic ultrasound devices and MRI gradient amplifiers. The BFR193WH6327 also serves vital functions in industrial process control systems and automated test equipment. Its compatibility with both leaded and surface-mount assembly processes provides design flexibility. Infineon Technologies employs rigorous screening protocols to ensure military-specification compliance where required. The transistor comes with complete characterization data and application-specific performance guidelines. Access our online design support tools including impedance matching calculators and thermal modeling software. Contact our technical sales team for assistance selecting the optimal BFR193WH6327 variant for your RF power amplification requirements.

General specs

  • Product Status: Active
  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -

Viewed products

onsemi

SS9018HBU

$0.00 (not set)
Diodes Incorporated

FMMT918TA

$0.00 (not set)
Infineon Technologies

BFP405E6433HTMA1

$0.00 (not set)
Infineon Technologies

BGB 540 E6327

$0.00 (not set)
onsemi

MPSH17_D75Z

$0.00 (not set)
CEL

NE202930-T1-A

$0.00 (not set)
onsemi

BF494_D27Z

$0.00 (not set)
Infineon Technologies

BFT92E6327

$0.00 (not set)
NXP USA Inc.

BFT92,215

$0.00 (not set)
CEL

NE68039-T1-A

$0.00 (not set)
Top