BFR182E-6327
Infineon Technologies
Infineon Technologies
RF N-CHANNEL MOSFET
$0.09
Available to order
Reference Price (USD)
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$0.09000
500+
$0.0891
1000+
$0.0882
1500+
$0.0873
2000+
$0.0864
2500+
$0.0855
Exquisite packaging
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BFR182E-6327
$0.09
Product details
Infineon Technologies's BFR182E-6327 sets the standard for RF performance in bipolar junction transistors within the discrete semiconductor products category. This high-frequency BJT combines excellent power added efficiency with superior linearity characteristics for demanding amplification tasks. Its unique collector design minimizes Kirk effect while maintaining high breakdown voltage capabilities. The transistor features optimized internal matching for reduced external component count in final applications. Telecommunications equipment manufacturers utilize this component in microwave radio links and software-defined radio platforms. Defense applications include electronic surveillance systems and tactical communication jammers. In the consumer electronics space, it enhances performance in next-generation WiFi 6E access points and 60GHz millimeter-wave devices. Industrial automation systems benefit from its reliability in wireless machine-to-machine (M2M) communication modules. The BFR182E-6327 also enables precise signal control in scientific instruments such as mass spectrometers and lidar systems. Its moisture-resistant packaging ensures long-term reliability in challenging environmental conditions. Infineon Technologies provides complete device characterization including large-signal and small-signal parameter sets. The product undergoes 100% automated testing to guarantee specified performance parameters. For engineers developing cutting-edge RF solutions, the BFR182E-6327 delivers uncompromising quality and performance. Visit our product page to download the latest datasheet revision or view 3D packaging models. Submit your inquiry today to receive volume pricing tiers and delivery options tailored to your production schedule.
General specs
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 1.3dB @ 1.8GHz
- Gain: 9.5dB
- Power - Max: 250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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