BFP843FH6327XTSA1
Infineon Technologies
Infineon Technologies
RF TRANS NPN 2.25V TSFP-4-1
$0.45
Available to order
Reference Price (USD)
3,000+
$0.18666
6,000+
$0.17587
15,000+
$0.16509
30,000+
$0.16329
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Infineon Technologies BFP843FH6327XTSA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
BFP843FH6327XTSA1
$0.45
Product details
The BFP843FH6327XTSA1 by Infineon Technologies redefines expectations for RF BJT transistors in the discrete semiconductor products segment. This high-frequency bipolar transistor combines low saturation voltage with impressive current gain characteristics, optimized for efficient signal processing. Its multi-emitter structure enhances switching speed while maintaining linear amplification capabilities. The product incorporates proprietary passivation techniques that improve long-term reliability and moisture resistance. Design engineers will appreciate the predictable performance curves and well-characterized noise parameters. Key application areas include satellite communication ground stations requiring stable uplink/downlink conversion. In automotive systems, it enables precise signal conditioning for collision avoidance radar and vehicle-to-everything (V2X) communication modules. Industrial IoT applications benefit from its low-power operation in wireless sensor networks and edge computing devices. The BFP843FH6327XTSA1 also serves critical functions in marine navigation equipment and underwater communication systems. Its compatibility with automated pick-and-place manufacturing processes simplifies high-volume production integration. Infineon Technologies subjects each unit to extensive parametric testing and quality verification procedures. For engineers developing compact RF solutions, this transistor offers an optimal balance of performance and footprint efficiency. Access detailed SPICE models and reference designs through our technical portal. Connect with our regional sales representatives to discuss volume pricing options or request evaluation kits for the BFP843FH6327XTSA1 transistor series.
General specs
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 2.25V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): 0.8dB ~ 1.7dB @ 450MHz ~ 10GHz
- Gain: 13.5dB ~ 25dB
- Power - Max: 125mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 1.8V
- Current - Collector (Ic) (Max): 55mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: PG-TSFP-4-1
Viewed products
