BCW67BE6327HTSA1
Infineon Technologies
Infineon Technologies
TRANS PNP 32V 0.8A SOT23
$0.04
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Reference Price (USD)
42,000+
$0.03444
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BCW67BE6327HTSA1
$0.04
Product details
Enhance your electronic designs with the BCW67BE6327HTSA1, a premium Bipolar Junction Transistor (BJT) from Infineon Technologies. This single BJT transistor belongs to the Discrete Semiconductor Products family and is engineered for optimal switching and amplification tasks. The BCW67BE6327HTSA1 features low saturation voltage and high current gain, ensuring efficient operation in diverse circuits. Its excellent thermal performance prevents overheating, even during prolonged use. The transistor's reliable switching speed makes it suitable for both analog and digital applications. Common uses include audio amplifiers, power regulators, and signal processing modules. Automotive systems, industrial controls, and consumer electronics can all benefit from this versatile component. The BCW67BE6327HTSA1 is designed to meet rigorous quality standards, providing long-term reliability. Compact and lightweight, it's perfect for space-constrained applications. Ready to incorporate this high-quality BJT into your next project? Contact us for more details and pricing options tailored to your needs.
General specs
- Product Status: Not For New Designs
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 32 V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
- Power - Max: 330 mW
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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