BCW60BE6327HTSA1
Infineon Technologies
Infineon Technologies
TRANS NPN 32V 0.1A SOT23
$0.03
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Reference Price (USD)
48,000+
$0.02457
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BCW60BE6327HTSA1
$0.03
Product details
The BCW60BE6327HTSA1 from Infineon Technologies represents advanced Bipolar Junction Transistor technology in the Discrete Semiconductor Products category. This single BJT solution provides superior current amplification with minimal power loss, making it ideal for energy-sensitive designs. The transistor's optimized geometry reduces parasitic effects that can compromise circuit performance. Engineers value its predictable characteristics and tight parameter distribution across production lots. The BCW60BE6327HTSA1 excels in both common-emitter and common-base configurations, offering design flexibility. Applications span from small-signal processing in consumer electronics to power management in industrial systems. Electric vehicle components, smart home devices, and test equipment manufacturers regularly specify this BJT. The device meets international safety and performance certifications, giving designers confidence in their selections. Its compatibility with automated assembly processes streamlines manufacturing workflows. Infineon Technologies backs the BCW60BE6327HTSA1 with comprehensive technical support and reliable supply chain management. To discuss how this transistor can optimize your specific application, please submit your requirements through our online inquiry system.
General specs
- Product Status: Not For New Designs
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 32 V
- Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
- Current - Collector Cutoff (Max): 20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
- Power - Max: 330 mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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