BCR198E6433HTMA1
Infineon Technologies
Infineon Technologies
TRANS PREBIAS PNP 200MW SOT23-3
$0.05
Available to order
Reference Price (USD)
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$0.04680
500+
$0.046332
1000+
$0.045864
1500+
$0.045396
2000+
$0.044928
2500+
$0.04446
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BCR198E6433HTMA1
$0.05
Product details
Delivering unmatched consistency, the BCR198E6433HTMA1 pre-biased transistor by Infineon Technologies features laser-trimmed resistors for precise biasing accuracy. The BJT excels in audio frequency applications due to its low intermodulation distortion, while its robust construction supports repetitive surge currents in switching scenarios. Typical deployments include power supply feedback loops, CNC machine signal conditioning, and photovoltaic system monitoring circuits. The component's MSL3-rated packaging guarantees moisture sensitivity control during storage. Engineers value its parametric consistency across extended production runs, reducing calibration overhead. Initiate your design-in process request free samples of BCR198E6433HTMA1 through our e-commerce platform.
General specs
- Product Status: Not For New Designs
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 47 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 190 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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