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BCR135SH6327XTSA1

Infineon Technologies
BCR135SH6327XTSA1 Preview
Infineon Technologies
TRANS 2NPN PREBIAS 0.25W SOT363
$0.44
Available to order
Reference Price (USD)
3,000+
$0.07259
6,000+
$0.06594
15,000+
$0.05928
30,000+
$0.05595
75,000+
$0.05040
Exquisite packaging
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Infineon Technologies BCR135SH6327XTSA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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BCR135SH6327XTSA1

BCR135SH6327XTSA1

$0.44

Product details

The BCR135SH6327XTSA1 by Infineon Technologies is a high-performance pre-biased bipolar junction transistor (BJT) array, categorized under Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased. This product is engineered to excel in a variety of electronic applications, ensuring reliability and efficiency. The BCR135SH6327XTSA1 features integrated pre-biasing, reducing the need for external components and streamlining design. Its outstanding thermal stability guarantees consistent operation under different conditions. This BJT array is ideal for signal amplification, load switching, and interface circuits. The BCR135SH6327XTSA1 is also widely used in industrial automation, consumer electronics, and telecommunication systems. With its high gain and low noise characteristics, it is perfect for precision and sensitive applications. The compact and robust design of the BCR135SH6327XTSA1 makes it suitable for both mass production and specialized projects. Engineers and designers can trust this transistor array for its consistent quality and performance. For more details on the BCR135SH6327XTSA1 and to obtain a personalized quote, please submit an inquiry and our team will assist you promptly.

General specs

  • Product Status: Not For New Designs
  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: 150MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-PO

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