Shopping cart

Subtotal: $0.00

BC848AE6327HTSA1

Infineon Technologies
BC848AE6327HTSA1 Preview
Infineon Technologies
TRANS NPN 30V 0.1A SOT23
$0.03
Available to order
Reference Price (USD)
48,000+
$0.02066
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Infineon Technologies BC848AE6327HTSA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
BC848AE6327HTSA1

BC848AE6327HTSA1

$0.03

Product details

Discover the BC848AE6327HTSA1, a high-efficiency Bipolar Junction Transistor from Infineon Technologies designed for precision electronic applications. As part of the Discrete Semiconductor Products range, this single BJT transistor offers excellent linearity and switching performance. The device features optimized electron mobility for enhanced signal fidelity in amplification circuits. Its symmetrical structure allows for flexible configuration in various circuit topologies. The BC848AE6327HTSA1 demonstrates remarkable stability across temperature variations, ensuring consistent operation. Common implementations include voltage regulators, oscillator circuits, and impedance matching networks. Industrial automation, audio equipment, and power supply designs frequently incorporate this reliable transistor. The component's durable packaging protects against mechanical stress and environmental factors. With its straightforward integration and proven reliability, the BC848AE6327HTSA1 simplifies circuit design challenges. Infineon Technologies's commitment to quality means you receive a product that meets rigorous industry standards. Interested in testing this BJT in your application? Request a quote through our online portal for prompt assistance from our sales team.

General specs

  • Product Status: Not For New Designs
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
  • Power - Max: 330 mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23

Viewed products

NXP USA Inc.

PDTB143XQA147

$0.00 (not set)
Microchip Technology

JANTX2N2222A

$0.00 (not set)
Diodes Incorporated

BCP54TA

$0.00 (not set)
Infineon Technologies

BCP6925H6327XTSA1

$0.00 (not set)
NTE Electronics, Inc

BDV64

$0.00 (not set)
Fairchild Semiconductor

KSP06BU

$0.00 (not set)
onsemi

BD680G

$0.00 (not set)
NTE Electronics, Inc

NTE75

$0.00 (not set)
onsemi

50A02CH-TL-H

$0.00 (not set)
onsemi

SBC807-25LT3G

$0.00 (not set)
Top