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BC817K16E6327HTSA1

Infineon Technologies
BC817K16E6327HTSA1 Preview
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
$0.38
Available to order
Reference Price (USD)
3,000+
$0.04246
6,000+
$0.03733
15,000+
$0.03219
30,000+
$0.03048
75,000+
$0.02877
150,000+
$0.02592
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Infineon Technologies BC817K16E6327HTSA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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BC817K16E6327HTSA1

BC817K16E6327HTSA1

$0.38

Product details

The BC817K16E6327HTSA1 from Infineon Technologies represents advanced Bipolar Junction Transistor technology in the Discrete Semiconductor Products category. This single BJT solution provides superior current amplification with minimal power loss, making it ideal for energy-sensitive designs. The transistor's optimized geometry reduces parasitic effects that can compromise circuit performance. Engineers value its predictable characteristics and tight parameter distribution across production lots. The BC817K16E6327HTSA1 excels in both common-emitter and common-base configurations, offering design flexibility. Applications span from small-signal processing in consumer electronics to power management in industrial systems. Electric vehicle components, smart home devices, and test equipment manufacturers regularly specify this BJT. The device meets international safety and performance certifications, giving designers confidence in their selections. Its compatibility with automated assembly processes streamlines manufacturing workflows. Infineon Technologies backs the BC817K16E6327HTSA1 with comprehensive technical support and reliable supply chain management. To discuss how this transistor can optimize your specific application, please submit your requirements through our online inquiry system.

General specs

  • Product Status: Not For New Designs
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 500 mW
  • Frequency - Transition: 170MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23

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