BAT17E6327HTSA1
Infineon Technologies
Infineon Technologies
DIODE SCHOTTKY 4V 150MW SOT23-3
$0.39
Available to order
Reference Price (USD)
3,000+
$0.05752
6,000+
$0.05059
15,000+
$0.04366
30,000+
$0.04135
75,000+
$0.03904
150,000+
$0.03442
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Infineon Technologies BAT17E6327HTSA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
BAT17E6327HTSA1
$0.39
Product details
Maximize your RF system's potential with the BAT17E6327HTSA1 from Infineon Technologies, a leader in Discrete Semiconductor Products. This high-performance diode delivers exceptional results in signal mixing and harmonic generation applications. Its precision-engineered junction provides superior RF characteristics for demanding technical applications. The component offers excellent repeatability and long-term stability in continuous operation. Engineers will value the BAT17E6327HTSA1's low loss characteristics and high isolation between ports. Its temperature-compensated design ensures consistent performance across operating conditions. The diode's advanced packaging technology minimizes parasitic effects that can degrade RF performance. Notable features include wide dynamic range and excellent phase linearity. These attributes make it perfect for electronic test equipment, spectrum analyzers, and signal generators. Wireless infrastructure applications benefit from its reliable operation in base station equipment. Industrial RF heating systems achieve better control with this component's precise characteristics. Scientific research applications requiring stable frequency references find an ideal solution in this diode. Infineon Technologies has produced the BAT17E6327HTSA1 to the highest quality standards in the industry. Extensive testing guarantees each unit's performance meets datasheet specifications. When your project requires premium RF components, trust this diode to deliver outstanding results. Submit your inquiry through our website to receive personalized technical support and pricing information. Discover how the BAT17E6327HTSA1 can address your specific design challenges.
General specs
- Product Status: Active
- Diode Type: Schottky - Single
- Voltage - Peak Reverse (Max): 4V
- Current - Max: 130 mA
- Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
- Resistance @ If, F: 15Ohm @ 5mA, 10kHz
- Power Dissipation (Max): 150 mW
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
Viewed products
