BAR9002ELE6327XTMA1
Infineon Technologies
Infineon Technologies
RF DIODE PIN 80V 250MW TSLP-2-19
$0.48
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30,000+
$0.04016
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$0.03765
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$0.03263
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BAR9002ELE6327XTMA1
$0.48
Product details
Maximize your RF system's potential with the BAR9002ELE6327XTMA1 from Infineon Technologies, a leader in Discrete Semiconductor Products. This high-performance diode delivers exceptional results in signal mixing and harmonic generation applications. Its precision-engineered junction provides superior RF characteristics for demanding technical applications. The component offers excellent repeatability and long-term stability in continuous operation. Engineers will value the BAR9002ELE6327XTMA1's low loss characteristics and high isolation between ports. Its temperature-compensated design ensures consistent performance across operating conditions. The diode's advanced packaging technology minimizes parasitic effects that can degrade RF performance. Notable features include wide dynamic range and excellent phase linearity. These attributes make it perfect for electronic test equipment, spectrum analyzers, and signal generators. Wireless infrastructure applications benefit from its reliable operation in base station equipment. Industrial RF heating systems achieve better control with this component's precise characteristics. Scientific research applications requiring stable frequency references find an ideal solution in this diode. Infineon Technologies has produced the BAR9002ELE6327XTMA1 to the highest quality standards in the industry. Extensive testing guarantees each unit's performance meets datasheet specifications. When your project requires premium RF components, trust this diode to deliver outstanding results. Submit your inquiry through our website to receive personalized technical support and pricing information. Discover how the BAR9002ELE6327XTMA1 can address your specific design challenges.
General specs
- Product Status: Active
- Diode Type: PIN - Single
- Voltage - Peak Reverse (Max): 80V
- Current - Max: 100 mA
- Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
- Resistance @ If, F: 800mOhm @ 10mA, 100MHz
- Power Dissipation (Max): 250 mW
- Operating Temperature: 150°C (TJ)
- Package / Case: 0402 (1006 Metric)
- Supplier Device Package: PG-TSLP-2-19
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