BAR151E6327HTSA1
Infineon Technologies
Infineon Technologies
RF DIODE PIN 100V 250MW SOT23-3
$0.52
Available to order
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$0.10892
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$0.09202
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BAR151E6327HTSA1
$0.52
Product details
Optimize your RF circuits with the BAR151E6327HTSA1 RF diode from Infineon Technologies, a premium solution in Discrete Semiconductor Products. This specialized diode offers outstanding frequency response characteristics for modern wireless technologies. Designed for professionals who demand accuracy in high-frequency applications, it provides stable operation across wide bandwidths. The diode's innovative architecture minimizes harmonic distortion while maximizing power handling capacity. You'll appreciate its consistent performance in both transmission and reception circuits, thanks to superior signal isolation properties. The BAR151E6327HTSA1 features enhanced electrostatic discharge protection, ensuring longevity in sensitive electronic environments. Its surface-mount design facilitates automated assembly processes without sacrificing performance. Technical highlights include excellent reverse recovery characteristics and low forward voltage drop. These qualities make it particularly suitable for mobile communication devices, GPS tracking systems, and automotive radar applications. Broadcast engineers value its performance in FM radio transmitters, while aerospace technicians rely on it for avionics systems. In scientific research equipment requiring precise RF modulation, this diode delivers exceptional results. The Infineon Technologies difference means rigorous quality testing and industry-leading reliability standards. For projects demanding the finest RF components, the BAR151E6327HTSA1 represents an intelligent choice. Contact our sales team through our online portal to discuss volume pricing and delivery options. Let us help you source the perfect RF solution for your technical challenges.
General specs
- Product Status: Last Time Buy
- Diode Type: PIN - 1 Pair Common Cathode
- Voltage - Peak Reverse (Max): 100V
- Current - Max: 140 mA
- Capacitance @ Vr, F: 0.5pF @ 50V, 1MHz
- Resistance @ If, F: 12Ohm @ 10mA, 100MHz
- Power Dissipation (Max): 250 mW
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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