2ED2110S06MXUMA1
Infineon Technologies
Infineon Technologies
LEVEL SHIFT SOI
$3.62
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2ED2110S06MXUMA1
$3.62
Product details
The 2ED2110S06MXUMA1 by Infineon Technologies sets new standards in PMIC - Gate Driver technology, offering unparalleled efficiency for power electronics applications. This high-speed gate driver IC delivers precise timing control and robust drive capability, making it suitable for both low and high-power systems. Its innovative design incorporates multiple protection features that safeguard against overcurrent, undervoltage, and thermal overload conditions. The 2ED2110S06MXUMA1 excels in applications requiring fast switching frequencies while maintaining minimal cross-conduction. The device's adaptive gate drive voltage ensures optimal performance across different operating conditions, contributing to overall system efficiency. For wireless charging systems, this gate driver provides the necessary control for efficient power transfer. It's equally effective in industrial welding equipment, where reliable switching is essential. The 2ED2110S06MXUMA1 also proves invaluable in server power supplies, enhancing energy conversion efficiency. The gate driver's isolated design makes it particularly suitable for high-voltage applications, including traction inverters for electric vehicles. Additional applications include plasma generation systems and high-intensity discharge lighting. With its configurable features, the 2ED2110S06MXUMA1 allows designers to tailor performance parameters to specific application requirements. The device supports multiple control interfaces for seamless integration into digital power management systems. Its low propagation delay ensures accurate timing in high-frequency switching applications. For designers seeking a reliable, high-performance gate driver solution, the 2ED2110S06MXUMA1 offers the perfect combination of features and flexibility. Contact our technical sales team today to discuss how this component can optimize your power management design. Submit your inquiry through our online portal for prompt response and detailed product information.
General specs
- Product Status: Active
- Driven Configuration: High-Side and Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10V ~ 20V
- Logic Voltage - VIL, VIH: 6V, 14V
- Current - Peak Output (Source, Sink): 2.5A, 2.5A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 650 V
- Rise / Fall Time (Typ): 25ns, 17ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
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