HTNFET-T
Honeywell Aerospace
Honeywell Aerospace
MOSFET N-CH 55V 4POWER TAB
$465.00
Available to order
Reference Price (USD)
1+
$434.00000
Exquisite packaging
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HTNFET-T
$465.00
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 400mOhm @ 100mA, 5V
- Vgs(th) (Max) @ Id: 2.4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V
- Vgs (Max): 10V
- Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 28 V
- FET Feature: -
- Power Dissipation (Max): 50W (Tj)
- Operating Temperature: -55°C ~ 225°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: 4-Power Tab
- Package / Case: 4-SIP
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