GT100N12D5
Goford Semiconductor
Goford Semiconductor
N120V,RD(MAX)<10M@10V,VTH2.5V~3.
$1.64
Available to order
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$1.64000
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$1.6236
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$1.6072
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$1.5908
2000+
$1.5744
2500+
$1.558
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GT100N12D5
$1.64
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 120 V
- Current - Continuous Drain (Id) @ 25°C: 70A
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 10mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 60 V
- FET Feature: -
- Power Dissipation (Max): 120W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (5x6)
- Package / Case: 8-PowerVDFN
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