G4616
Goford Semiconductor
Goford Semiconductor
N+P/-40V,RD(MAX)<20M@10V,RD(MAX)
$0.62
Available to order
Reference Price (USD)
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$0.62000
500+
$0.6138
1000+
$0.6076
1500+
$0.6014
2000+
$0.5952
2500+
$0.589
Exquisite packaging
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G4616
$0.62
Product details
General specs
- Product Status: Active
- FET Type: N and P-Channel Complementary
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 7A (Tc)
- Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, 35mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 20V, 520pF @ 20V
- Power - Max: 2W (Tc), 2.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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