18N20
Goford Semiconductor
Goford Semiconductor
N 200V, RD(MAX)<0.16@10V,VTH1.0V
$0.94
Available to order
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$0.94000
500+
$0.9306
1000+
$0.9212
1500+
$0.9118
2000+
$0.9024
2500+
$0.893
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18N20
$0.94
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 836 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 65.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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