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GD25Q80EWIGR

GigaDevice Semiconductor (HK) Limited
GD25Q80EWIGR Preview
GigaDevice Semiconductor (HK) Limited
8MBIT NOR FLASH /3.3V /WSON8 6*5
$0.71
Available to order
Reference Price (USD)
1+
$0.71000
500+
$0.7029
1000+
$0.6958
1500+
$0.6887
2000+
$0.6816
2500+
$0.6745
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GigaDevice Semiconductor (HK) Limited GD25Q80EWIGR is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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GD25Q80EWIGR

GD25Q80EWIGR

$0.71

Product details

Discover the GD25Q80EWIGR by GigaDevice Semiconductor (HK) Limited, a high-efficiency memory IC engineered for next-generation computing platforms. This innovative solution delivers superior performance metrics, combining speed, capacity, and power optimization in a single package. Its architecture is tailored for both embedded and expandable memory applications. The GD25Q80EWIGR features include dynamic frequency scaling, bank interleaving support, and thermal throttling capability. These advanced features enable optimal performance across various operating conditions. The memory IC offers excellent signal integrity at high speeds while maintaining low power consumption. Its design incorporates reliability enhancements for continuous operation. Ideal applications include hyperscale data centers, AI inference accelerators, and autonomous mobile robots. The GD25Q80EWIGR is equally effective in virtual reality systems, genomic sequencing equipment, and quantum computing interfaces. Its capabilities extend to smart agriculture systems and renewable energy management platforms requiring high-performance memory solutions. To learn more about integrating this GigaDevice Semiconductor (HK) Limited memory IC into your design, submit your inquiry through our online portal. Our application engineers will provide technical support and procurement options for the GD25Q80EWIGR, ensuring optimal memory performance for your specific requirements.

General specs

  • Product Status: Active
  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 8Mb (1M x 8)
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 70µs, 2ms
  • Access Time: 7 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (5x6)

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