MURTA20060R
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE GEN PURP 600V 100A 3 TOWER
$145.32
Available to order
Reference Price (USD)
18+
$104.63222
Exquisite packaging
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MURTA20060R
$145.32
Product details
General specs
- Product Status: Active
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io) (per Diode): 100A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 25 µA @ 600 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
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