MURT30060R
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE MODULE 600V 150A 3TOWER
$118.42
Available to order
Reference Price (USD)
25+
$99.20360
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
GeneSiC Semiconductor MURT30060R is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
MURT30060R
$118.42
Product details
The MURT30060R from GeneSiC Semiconductor is a high-efficiency rectifier diode array designed for compact and high-power applications. Part of the Discrete Semiconductor Products family, this array integrates multiple diodes to streamline your PCB design. Its superior thermal management ensures reliable performance in industrial motor drives and power supplies. The MURT30060R is also ideal for use in telecommunications equipment, providing stable power conversion for network infrastructure. In renewable energy systems, it enhances the efficiency of solar and wind power inverters. Automotive applications include hybrid and electric vehicle powertrains. With its high isolation voltage and low leakage current, the MURT30060R is a dependable solution for critical power management tasks. Trust GeneSiC Semiconductor for high-quality diode arrays that meet your technical specifications. Get in touch with us today for pricing and delivery options.
General specs
- Product Status: Active
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io) (per Diode): 150A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 150 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 200 ns
- Current - Reverse Leakage @ Vr: 25 µA @ 50 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
Viewed products
