MSRTA500100A
GeneSiC Semiconductor

GeneSiC Semiconductor
DIODE MODULE 1KV 500A 3TOWER
$106.33
Available to order
Reference Price (USD)
1+
$106.33480
500+
$105.271452
1000+
$104.208104
1500+
$103.144756
2000+
$102.081408
2500+
$101.01806
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
DHL / Fedex / UPS | 2-5 days |
TNT | 2-6 days |
EMS | 3-7 days |
GeneSiC Semiconductor MSRTA500100A is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
Product details
The MSRTA500100A from GeneSiC Semiconductor is a high-efficiency rectifier diode array designed for compact and high-power applications. Part of the Discrete Semiconductor Products family, this array integrates multiple diodes to streamline your PCB design. Its superior thermal management ensures reliable performance in industrial motor drives and power supplies. The MSRTA500100A is also ideal for use in telecommunications equipment, providing stable power conversion for network infrastructure. In renewable energy systems, it enhances the efficiency of solar and wind power inverters. Automotive applications include hybrid and electric vehicle powertrains. With its high isolation voltage and low leakage current, the MSRTA500100A is a dependable solution for critical power management tasks. Trust GeneSiC Semiconductor for high-quality diode arrays that meet your technical specifications. Get in touch with us today for pricing and delivery options.
General specs
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io) (per Diode): 500A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 25 µA @ 600 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower