MBR60030CT
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE MODULE 30V 300A 2TOWER
$129.36
Available to order
Reference Price (USD)
25+
$96.34800
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MBR60030CT
$129.36
Product details
The MBR60030CT from GeneSiC Semiconductor is a high-efficiency rectifier diode array designed for compact and high-power applications. Part of the Discrete Semiconductor Products family, this array integrates multiple diodes to streamline your PCB design. Its superior thermal management ensures reliable performance in industrial motor drives and power supplies. The MBR60030CT is also ideal for use in telecommunications equipment, providing stable power conversion for network infrastructure. In renewable energy systems, it enhances the efficiency of solar and wind power inverters. Automotive applications include hybrid and electric vehicle powertrains. With its high isolation voltage and low leakage current, the MBR60030CT is a dependable solution for critical power management tasks. Trust GeneSiC Semiconductor for high-quality diode arrays that meet your technical specifications. Get in touch with us today for pricing and delivery options.
General specs
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io) (per Diode): 300A
- Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 mA @ 20 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Twin Tower
- Supplier Device Package: Twin Tower
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