GD30MPS06J
GeneSiC Semiconductor
GeneSiC Semiconductor
650V 30A TO-263-7 SIC SCHOTTKY M
$7.06
Available to order
Reference Price (USD)
1+
$7.06000
500+
$6.9894
1000+
$6.9188
1500+
$6.8482
2000+
$6.7776
2500+
$6.707
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GD30MPS06J
$7.06
Product details
Optimize your power electronics with GeneSiC Semiconductor's GD30MPS06J single rectifier diode, a high-efficiency solution for modern circuit designs. This diode features superior current handling capabilities combined with low power dissipation, making it ideal for energy-conscious applications. The GD30MPS06J demonstrates excellent performance in voltage clamping, freewheeling, and reverse polarity protection circuits. Its advanced semiconductor design ensures reliable operation in switching power supplies, DC-DC converters, and battery management systems. The component's thermal characteristics allow for operation in high ambient temperature environments without performance degradation. Common industry applications include electric vehicle charging systems, industrial motor drives, and photovoltaic inverters. Additional advantages include consistent forward voltage characteristics and robust surge protection. Engineers will appreciate the diode's reliability in mission-critical power conversion tasks. For detailed technical information and volume pricing options, contact our sales team today.
General specs
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 51A (DC)
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: 735pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
- Supplier Device Package: TO-263-7
- Operating Temperature - Junction: -55°C ~ 175°C
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