GC08MPS12-220
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC DIODE 1200V 8A TO-220-2
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$9.09000
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$8.17900
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$7.45240
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$6.72530
250+
$6.17996
500+
$5.63468
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$4.90763
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GC08MPS12-220
$0.00
Product details
GeneSiC Semiconductor's GC08MPS12-220 represents the next generation of single rectifier diodes, combining cutting-edge technology with practical design. This component offers superior performance in voltage regulation and power conversion tasks, with exceptional temperature stability. The diode's advanced architecture ensures fast recovery times and minimal switching losses, critical for modern electronic systems. Designers will appreciate its compatibility with automated assembly processes and consistent batch-to-batch performance. Primary applications include consumer electronics, medical devices, and power distribution systems. The GC08MPS12-220 is particularly effective in battery-powered devices where energy efficiency is paramount. Its rugged design meets stringent quality standards for reliability in demanding environments. For engineers seeking a dependable rectification solution, the GC08MPS12-220 delivers outstanding results. Request a quote now to incorporate this high-quality diode into your next project.
General specs
- Product Status: Obsolete
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 43A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 7 µA @ 1200 V
- Capacitance @ Vr, F: 545pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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