G3R350MT12D
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC MOSFET N-CH 11A TO247-3
$5.03
Available to order
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G3R350MT12D
$5.03
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 420mOhm @ 4A, 15V
- Vgs(th) (Max) @ Id: 2.69V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 15 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 74W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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