G2R50MT33K
GeneSiC Semiconductor
GeneSiC Semiconductor
3300V 50M TO-247-4 SIC MOSFET
$325.24
Available to order
Reference Price (USD)
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$325.24000
500+
$321.9876
1000+
$318.7352
1500+
$315.4828
2000+
$312.2304
2500+
$308.978
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G2R50MT33K
$325.24
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 3300 V
- Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 3.5V @ 10mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 340 nC @ 20 V
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 7301 pF @ 1000 V
- FET Feature: Standard
- Power Dissipation (Max): 536W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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