G2R1000MT17D
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC MOSFET N-CH 4A TO247-3
$5.77
Available to order
Reference Price (USD)
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$5.77000
500+
$5.7123
1000+
$5.6546
1500+
$5.5969
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$5.5392
2500+
$5.4815
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G2R1000MT17D
$5.77
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
- Vgs(th) (Max) @ Id: 4V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +20V, -5V
- Input Capacitance (Ciss) (Max) @ Vds: 139 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 53W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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