1N3210R
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE GEN PURP REV 200V 15A DO5
$7.06
Available to order
Reference Price (USD)
300+
$7.49607
Exquisite packaging
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1N3210R
$7.06
Product details
The 1N3210R from GeneSiC Semiconductor represents a breakthrough in single rectifier diode technology, offering unmatched performance in power conversion applications. This diode features an innovative design that minimizes switching losses while maximizing current handling capacity. Its precision-engineered junction provides stable characteristics under varying load conditions, ensuring reliable operation in demanding environments. The 1N3210R is particularly effective in high-voltage applications such as X-ray generators and electrostatic precipitators. Industrial automation systems benefit from its fast response times and consistent performance. Other key applications include railway traction systems, mining equipment, and oil field instrumentation. The diode's rugged construction meets military-grade specifications for shock and vibration resistance. With its combination of high efficiency and durability, the 1N3210R is an excellent choice for critical power electronics. Request a sample today to experience its superior performance in your application.
General specs
- Product Status: Active
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 50 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-203AB (DO-5)
- Operating Temperature - Junction: -65°C ~ 175°C
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