1N1186R
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE GEN PURP REV 200V 35A DO5
$7.47
Available to order
Reference Price (USD)
300+
$7.89663
Exquisite packaging
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GeneSiC Semiconductor 1N1186R is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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1N1186R
$7.47
Product details
The 1N1186R from GeneSiC Semiconductor is a high-performance single rectifier diode designed for efficient power conversion in various electronic applications. This diode ensures reliable operation with its robust construction and advanced semiconductor technology. Ideal for both industrial and consumer electronics, the 1N1186R offers excellent forward voltage characteristics and low reverse leakage current, making it a versatile choice for designers. Its compact form factor allows for easy integration into space-constrained designs. Whether you're working on power supplies, battery chargers, or signal demodulation circuits, this diode delivers consistent performance. Key features include fast switching capabilities, high surge current tolerance, and superior thermal management. Common applications include automotive systems, renewable energy inverters, and telecommunications equipment. For pricing and availability, submit an inquiry today to find the perfect solution for your project needs.
General specs
- Product Status: Active
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 35A
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 50 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -65°C ~ 190°C
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