GE12047CCA3
General Electric
General Electric
1200V 475A SIC HALF-BRIDGE MODUL
$1,925.00
Available to order
Reference Price (USD)
1+
$1925.00000
500+
$1905.75
1000+
$1886.5
1500+
$1867.25
2000+
$1848
2500+
$1828.75
Exquisite packaging
Discount
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GE12047CCA3
$1,925.00
Product details
The GE12047CCA3 by General Electric is a premium MOSFET array in the Discrete Semiconductor Products category, specifically under Transistors - FETs, MOSFETs - Arrays. This product is engineered for high-efficiency power switching, making it ideal for advanced electronic systems.\n\nNotable features of the GE12047CCA3 include optimized switching performance, low on-resistance, and excellent thermal conductivity. The array configuration allows for compact and efficient designs, reducing overall system complexity. Its high reliability ensures long-term performance in various applications.\n\nApplications include data centers, automotive infotainment, and portable devices. Data centers benefit from its efficiency in power distribution. Automotive infotainment systems rely on its performance for audio and display controls. Portable devices utilize its compact size and low power consumption.\n\nExplore the benefits of the GE12047CCA3. Request a quote today to learn more about how it can enhance your designs. Our team is ready to assist with your technical and procurement needs.
General specs
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 475A
- Rds On (Max) @ Id, Vgs: 4.4mOhm @ 475A, 20V
- Vgs(th) (Max) @ Id: 4.5V @ 160mA
- Gate Charge (Qg) (Max) @ Vgs: 1248nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds: 29.3nF @ 600V
- Power - Max: 1250W
- Operating Temperature: -55°C ~ 150°C (Tc)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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