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GPI65030DFN

GaNPower
GPI65030DFN Preview
GaNPower
GANFET N-CH 650V 30A DFN8X8
$15.00
Available to order
Reference Price (USD)
1+
$15.00000
500+
$14.85
1000+
$14.7
1500+
$14.55
2000+
$14.4
2500+
$14.25
Exquisite packaging
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GPI65030DFN

GPI65030DFN

$15.00

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 30A
  • Drive Voltage (Max Rds On, Min Rds On): 6V
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 1.2V @ 3.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 6 V
  • Vgs (Max): +7.5V, -12V
  • Input Capacitance (Ciss) (Max) @ Vds: 241 pF @ 400 V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die

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