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MR2A08AYS35

Everspin Technologies Inc.
MR2A08AYS35 Preview
Everspin Technologies Inc.
IC RAM 4MBIT PARALLEL 44TSOP2
$31.53
Available to order
Reference Price (USD)
1+
$21.47000
10+
$19.99600
25+
$19.77640
50+
$19.28820
135+
$16.93363
270+
$16.36019
540+
$16.22600
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Everspin Technologies Inc. MR2A08AYS35 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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MR2A08AYS35

MR2A08AYS35

$31.53

Product details

Discover the MR2A08AYS35 by Everspin Technologies Inc., a high-efficiency memory IC engineered for next-generation computing platforms. This innovative solution delivers superior performance metrics, combining speed, capacity, and power optimization in a single package. Its architecture is tailored for both embedded and expandable memory applications. The MR2A08AYS35 features include dynamic frequency scaling, bank interleaving support, and thermal throttling capability. These advanced features enable optimal performance across various operating conditions. The memory IC offers excellent signal integrity at high speeds while maintaining low power consumption. Its design incorporates reliability enhancements for continuous operation. Ideal applications include hyperscale data centers, AI inference accelerators, and autonomous mobile robots. The MR2A08AYS35 is equally effective in virtual reality systems, genomic sequencing equipment, and quantum computing interfaces. Its capabilities extend to smart agriculture systems and renewable energy management platforms requiring high-performance memory solutions. To learn more about integrating this Everspin Technologies Inc. memory IC into your design, submit your inquiry through our online portal. Our application engineers will provide technical support and procurement options for the MR2A08AYS35, ensuring optimal memory performance for your specific requirements.

General specs

  • Product Status: Active
  • Memory Type: Non-Volatile
  • Memory Format: RAM
  • Technology: MRAM (Magnetoresistive RAM)
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 35ns
  • Access Time: 35 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP2

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