EM6HE08EW9G-10IH
Etron Technology, Inc.
Etron Technology, Inc.
4GB (512MX8) DDR3. 78-BALL WINDO
$10.51
Available to order
Reference Price (USD)
1+
$10.51000
500+
$10.4049
1000+
$10.2998
1500+
$10.1947
2000+
$10.0896
2500+
$9.9845
Exquisite packaging
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| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Etron Technology, Inc. EM6HE08EW9G-10IH is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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EM6HE08EW9G-10IH
$10.51
Product details
The EM6HE08EW9G-10IH memory IC by Etron Technology, Inc. delivers cutting-edge storage technology for advanced computing applications. This high-performance solution combines speed, capacity, and reliability in a single package, addressing the growing demands of data-centric systems. Its architecture is optimized for both standalone and embedded memory applications.
Product highlights include parallel processing support, multi-bank operation capability, and advanced data protection features. The EM6HE08EW9G-10IH offers excellent signal integrity at high frequencies, making it suitable for high-speed system designs. Its power-efficient operation extends battery life in portable applications while maintaining consistent performance.
Target applications include neural network processors, cloud computing infrastructure, and high-frequency trading systems. The EM6HE08EW9G-10IH is also perfect for video processing equipment, scientific research instruments, and telecommunications base stations. Its capabilities extend to automotive vision systems and industrial quality inspection machines requiring real-time data analysis.
To learn more about implementing this Etron Technology, Inc. memory IC in your project, submit your requirements through our online platform. Our technical specialists will provide application-specific guidance and procurement options for the EM6HE08EW9G-10IH memory solution.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 4Gb (512M x 8)
- Memory Interface: Parallel
- Clock Frequency: 933 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.283V ~ 1.45V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 78-TFBGA
- Supplier Device Package: 78-FBGA (7.5x10.6)
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