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EM6HE08EW3F-12H

Etron Technology, Inc.
EM6HE08EW3F-12H Preview
Etron Technology, Inc.
IC DRAM 4GBIT PARALLEL 78FBGA
$5.21
Available to order
Reference Price (USD)
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$5.20661
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$5.1545439
1000+
$5.1024778
1500+
$5.0504117
2000+
$4.9983456
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$4.9462795
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Etron Technology, Inc. EM6HE08EW3F-12H is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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EM6HE08EW3F-12H

EM6HE08EW3F-12H

$5.21

Product details

Discover the EM6HE08EW3F-12H by Etron Technology, Inc., a high-efficiency memory IC engineered for next-generation computing platforms. This innovative solution delivers superior performance metrics, combining speed, capacity, and power optimization in a single package. Its architecture is tailored for both embedded and expandable memory applications. The EM6HE08EW3F-12H features include dynamic frequency scaling, bank interleaving support, and thermal throttling capability. These advanced features enable optimal performance across various operating conditions. The memory IC offers excellent signal integrity at high speeds while maintaining low power consumption. Its design incorporates reliability enhancements for continuous operation. Ideal applications include hyperscale data centers, AI inference accelerators, and autonomous mobile robots. The EM6HE08EW3F-12H is equally effective in virtual reality systems, genomic sequencing equipment, and quantum computing interfaces. Its capabilities extend to smart agriculture systems and renewable energy management platforms requiring high-performance memory solutions. To learn more about integrating this Etron Technology, Inc. memory IC into your design, submit your inquiry through our online portal. Our application engineers will provide technical support and procurement options for the EM6HE08EW3F-12H, ensuring optimal memory performance for your specific requirements.

General specs

  • Product Status: Active
  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 800 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-FBGA (9x10.6)

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