EM6GE16EWXD-10IH
Etron Technology, Inc.
Etron Technology, Inc.
IC DRAM 4GBIT PARALLEL 96FBGA
$5.85
Available to order
Reference Price (USD)
1+
$5.85000
500+
$5.7915
1000+
$5.733
1500+
$5.6745
2000+
$5.616
2500+
$5.5575
Exquisite packaging
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| EMS | 3-7 days |
Etron Technology, Inc. EM6GE16EWXD-10IH is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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EM6GE16EWXD-10IH
$5.85
Product details
Introducing the EM6GE16EWXD-10IH from Etron Technology, Inc., a high-reliability memory IC designed for next-generation electronic systems. This memory solution offers exceptional data integrity and access speeds, catering to the most demanding application requirements. Its architecture is optimized for both performance and power efficiency in diverse operating environments.
Key characteristics include sector-based protection mechanisms, rapid erase/write cycles, and extended data retention periods. The EM6GE16EWXD-10IH incorporates intelligent power management features that automatically adjust to system requirements, maximizing energy efficiency without sacrificing performance. Its robust design ensures operation stability across various voltage conditions.
The memory IC excels in applications such as autonomous vehicle perception systems, industrial IoT gateways, and enterprise SSD storage. It's equally effective in augmented reality devices, satellite communication equipment, and factory automation controllers. The EM6GE16EWXD-10IH also serves well in smart city infrastructure and portable military communication devices.
For detailed technical information and purchasing options for this Etron Technology, Inc. memory solution, please use our online inquiry system. We offer flexible supply chain solutions and application engineering support for the EM6GE16EWXD-10IH to ensure successful implementation in your design.
General specs
- Product Status: Not For New Designs
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3
- Memory Size: 4Gb (256M x 16)
- Memory Interface: Parallel
- Clock Frequency: 933 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.425V ~ 1.575V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-FBGA (9x13)
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