EM6GE08EW9G-10IH
Etron Technology, Inc.
Etron Technology, Inc.
IC DRAM 4GBIT PARALLEL 78FBGA
$8.28
Available to order
Reference Price (USD)
1+
$8.28000
500+
$8.1972
1000+
$8.1144
1500+
$8.0316
2000+
$7.9488
2500+
$7.866
Exquisite packaging
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| TNT | 2-6 days |
| EMS | 3-7 days |
Etron Technology, Inc. EM6GE08EW9G-10IH is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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EM6GE08EW9G-10IH
$8.28
Product details
Etron Technology, Inc.'s EM6GE08EW9G-10IH represents a breakthrough in memory IC technology, offering unprecedented performance for data storage applications. This advanced solution combines high-speed operation with exceptional reliability, meeting the stringent requirements of modern electronic systems. Its architecture is designed for seamless integration and future scalability.
Notable features include simultaneous read/write capability, power-loss data protection, and adaptive refresh technology. The EM6GE08EW9G-10IH supports multiple operating modes to optimize performance for specific application requirements. Its robust design ensures data integrity even in electrically noisy environments, making it suitable for industrial applications.
The memory IC is ideal for use in financial transaction systems, emergency response equipment, and high-security access control. It also performs exceptionally well in video surveillance systems, e-mobility controllers, and agricultural automation devices. The EM6GE08EW9G-10IH serves aerospace applications requiring radiation-tolerant memory and underwater exploration equipment needing pressure-resistant solutions.
Explore the capabilities of this Etron Technology, Inc. memory IC by submitting your inquiry through our digital platform. We offer technical specifications, application notes, and customized procurement solutions for the EM6GE08EW9G-10IH to support your project development cycle.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3
- Memory Size: 4Gb (512M x 8)
- Memory Interface: Parallel
- Clock Frequency: 933 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.425V ~ 1.575V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 78-TFBGA
- Supplier Device Package: 78-FBGA (7.5x10.6)
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