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EM6GD08EWUF-10H

Etron Technology, Inc.
EM6GD08EWUF-10H Preview
Etron Technology, Inc.
IC DRAM 2GBIT PARALLEL 78FBGA
$3.00
Available to order
Reference Price (USD)
1+
$2.99534
500+
$2.9653866
1000+
$2.9354332
1500+
$2.9054798
2000+
$2.8755264
2500+
$2.845573
Exquisite packaging
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Etron Technology, Inc. EM6GD08EWUF-10H is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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EM6GD08EWUF-10H

EM6GD08EWUF-10H

$3.00

Product details

The EM6GD08EWUF-10H by Etron Technology, Inc. represents the next generation of memory IC technology, offering unparalleled performance for data-intensive applications. This memory solution combines high density with rapid access capabilities, providing system designers with flexible options for various architectural requirements. Its advanced interface ensures compatibility with modern processors and controllers. Notable features include enhanced security protocols to protect sensitive data, multi-level cell technology for efficient storage, and adaptive power management for energy-sensitive applications. The EM6GD08EWUF-10H demonstrates exceptional endurance characteristics, making it suitable for applications with frequent read/write cycles. Its architecture supports seamless scaling for future system upgrades. This memory IC finds perfect application in AI accelerator cards, high-performance computing clusters, and data center storage arrays. It's equally effective in automotive ADAS systems, 5G network infrastructure, and industrial robotics requiring real-time data processing. The EM6GD08EWUF-10H also serves well in advanced medical imaging equipment and scientific instrumentation. To explore how this Etron Technology, Inc. memory IC can optimize your design, submit your inquiry through our digital platform. We offer comprehensive support from technical consultation to volume pricing for the EM6GD08EWUF-10H memory solution.

General specs

  • Product Status: Not For New Designs
  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 2Gb (256M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 933 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.425V ~ 1.575V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-FBGA (8x10.5)

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