FBG10N05AC
EPC Space, LLC
EPC Space, LLC
GAN FET HEMT 100V5A COTS 4FSMD-A
$313.40
Available to order
Reference Price (USD)
1+
$313.40000
500+
$310.266
1000+
$307.132
1500+
$303.998
2000+
$300.864
2500+
$297.73
Exquisite packaging
Discount
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| TNT | 2-6 days |
| EMS | 3-7 days |
EPC Space, LLC FBG10N05AC is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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FBG10N05AC
$313.40
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 1.2mA
- Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V
- Vgs (Max): +6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 233 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-SMD
- Package / Case: 4-SMD, No Lead
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