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MR850T/R

EIC SEMICONDUCTOR INC.
MR850T/R Preview
EIC SEMICONDUCTOR INC.
DIODE GEN PURP 50V 3A DO201AD
$0.11
Available to order
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EIC SEMICONDUCTOR INC. MR850T/R is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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MR850T/R

MR850T/R

$0.11

Product details

The MR850T/R from EIC SEMICONDUCTOR INC. represents a breakthrough in single rectifier diode technology, offering unmatched performance in power conversion applications. This diode features an innovative design that minimizes switching losses while maximizing current handling capacity. Its precision-engineered junction provides stable characteristics under varying load conditions, ensuring reliable operation in demanding environments. The MR850T/R is particularly effective in high-voltage applications such as X-ray generators and electrostatic precipitators. Industrial automation systems benefit from its fast response times and consistent performance. Other key applications include railway traction systems, mining equipment, and oil field instrumentation. The diode's rugged construction meets military-grade specifications for shock and vibration resistance. With its combination of high efficiency and durability, the MR850T/R is an excellent choice for critical power electronics. Request a sample today to experience its superior performance in your application.

General specs

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 50 V
  • Capacitance @ Vr, F: 28pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 150°C

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