ZXTP2012ASTOA
Diodes Incorporated
Diodes Incorporated
TRANS PNP 60V 3.5A E-LINE
$0.20
Available to order
Reference Price (USD)
1+
$0.20160
500+
$0.199584
1000+
$0.197568
1500+
$0.195552
2000+
$0.193536
2500+
$0.19152
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Diodes Incorporated ZXTP2012ASTOA is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
ZXTP2012ASTOA
$0.20
Product details
Discover the ZXTP2012ASTOA, a high-efficiency Bipolar Junction Transistor from Diodes Incorporated designed for precision electronic applications. As part of the Discrete Semiconductor Products range, this single BJT transistor offers excellent linearity and switching performance. The device features optimized electron mobility for enhanced signal fidelity in amplification circuits. Its symmetrical structure allows for flexible configuration in various circuit topologies. The ZXTP2012ASTOA demonstrates remarkable stability across temperature variations, ensuring consistent operation. Common implementations include voltage regulators, oscillator circuits, and impedance matching networks. Industrial automation, audio equipment, and power supply designs frequently incorporate this reliable transistor. The component's durable packaging protects against mechanical stress and environmental factors. With its straightforward integration and proven reliability, the ZXTP2012ASTOA simplifies circuit design challenges. Diodes Incorporated's commitment to quality means you receive a product that meets rigorous industry standards. Interested in testing this BJT in your application? Request a quote through our online portal for prompt assistance from our sales team.
General specs
- Product Status: Obsolete
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3.5 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 210mV @ 400mA, 4A
- Current - Collector Cutoff (Max): 20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
- Power - Max: 1 W
- Frequency - Transition: 120MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: E-Line-3
- Supplier Device Package: E-Line (TO-92 compatible)
Viewed products
