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ZXTDCM832TA

Diodes Incorporated
ZXTDCM832TA Preview
Diodes Incorporated
TRANS 2NPN 50V 4A 8MLP
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Diodes Incorporated ZXTDCM832TA is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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ZXTDCM832TA

ZXTDCM832TA

$0.00

Product details

Diodes Incorporated's ZXTDCM832TA stands as a superior choice in Bipolar Junction Transistor (BJT) Arrays within Discrete Semiconductor Products. This high-performance component combines multiple transistors with tightly controlled parameters in a single package. The ZXTDCM832TA delivers exceptional current amplification with minimal variation between elements. Its design focuses on thermal equilibrium across all transistors for uniform performance. The product features low leakage currents and high breakdown voltage ratings. With its space-efficient packaging, it enables compact circuit designs without sacrificing capability. The ZXTDCM832TA demonstrates excellent switching characteristics for both analog and digital applications. Its robust construction ensures reliability in challenging operating environments. Precision instrumentation benefits from its stable amplification characteristics. Motor drive circuits utilize its synchronized switching capabilities. Power conversion systems employ it for efficient energy management. The ZXTDCM832TA also finds application in sophisticated control systems. Diodes Incorporated has implemented advanced quality assurance protocols in its manufacturing. The component's design facilitates effective heat dissipation in high-power scenarios. Its RoHS-compliant construction meets contemporary environmental standards. For engineers requiring reliable, high-performance transistor arrays, the ZXTDCM832TA offers an excellent solution. Contact us today through our online platform to inquire about pricing and delivery options.

General specs

  • Product Status: Obsolete
  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A
  • Current - Collector Cutoff (Max): 25nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
  • Power - Max: 1.7W
  • Frequency - Transition: 165MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: 8-MLP (3x2)

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