ZXMN2B03E6TA
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 20V 4.3A SOT23-6
$0.85
Available to order
Reference Price (USD)
3,000+
$0.32490
6,000+
$0.30499
15,000+
$0.29503
30,000+
$0.28960
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| EMS | 3-7 days |
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ZXMN2B03E6TA
$0.85
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 40mOhm @ 4.3A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-6
- Package / Case: SOT-23-6
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