ZXMN10A09KTC
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 100V 5A TO252-3
$1.87
Available to order
Reference Price (USD)
2,500+
$0.92675
5,000+
$0.89650
12,500+
$0.88000
Exquisite packaging
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| EMS | 3-7 days |
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ZXMN10A09KTC
$1.87
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 85mOhm @ 4.6A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1313 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 2.15W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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