ZXMHN6A07T8TA
Diodes Incorporated
Diodes Incorporated
MOSFET 4N-CH 60V 1.4A SM8
$0.00
Available to order
Reference Price (USD)
1,000+
$2.52000
Exquisite packaging
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| TNT | 2-6 days |
| EMS | 3-7 days |
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ZXMHN6A07T8TA
$0.00
Product details
General specs
- Product Status: Obsolete
- FET Type: 4 N-Channel (Half Bridge)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 1.4A
- Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 166pF @ 40V
- Power - Max: 1.6W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-223-8
- Supplier Device Package: SM8
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