ZXMHC10A07T8TA
Diodes Incorporated
Diodes Incorporated
MOSFET 2N/2P-CH 100V 1A/0.8A SM8
$1.01
Available to order
Reference Price (USD)
1,000+
$0.87725
2,000+
$0.81675
5,000+
$0.78650
10,000+
$0.77000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Diodes Incorporated ZXMHC10A07T8TA is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
ZXMHC10A07T8TA
$1.01
Product details
Introducing the ZXMHC10A07T8TA from Diodes Incorporated, a high-performance MOSFET array in the Discrete Semiconductor Products category. Part of the Transistors - FETs, MOSFETs - Arrays subcategory, this product is designed for applications requiring robust power handling and efficient switching.\n\nThe ZXMHC10A07T8TA offers features such as low gate charge, high current capability, and excellent thermal performance. The array format integrates multiple transistors, simplifying design and reducing component count. Its reliable construction ensures consistent operation in demanding environments.\n\nThis MOSFET array is widely used in home appliances, industrial drives, and telecommunications. Home appliances benefit from its energy efficiency and durability. Industrial drives utilize its high power handling for motor control. Telecommunications equipment relies on its fast switching for signal processing.\n\nReady to incorporate the ZXMHC10A07T8TA into your projects? Submit an inquiry to get started. Our team is here to provide the support and information you need.
General specs
- Product Status: Active
- FET Type: 2 N and 2 P-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 1A, 800mA
- Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 60V
- Power - Max: 1.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-223-8
- Supplier Device Package: SM8
Viewed products
