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ZX3CD1S1M832TA

Diodes Incorporated
ZX3CD1S1M832TA Preview
Diodes Incorporated
TRANS PNP 12V 4A 3X2MM 8MLP
$0.57
Available to order
Reference Price (USD)
3,000+
$0.47922
Exquisite packaging
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ZX3CD1S1M832TA

ZX3CD1S1M832TA

$0.57

Product details

Experience superior semiconductor performance with the ZX3CD1S1M832TA, a high-efficiency Bipolar Junction Transistor from Diodes Incorporated. As part of the Discrete Semiconductor Products catalog, this single BJT delivers optimal characteristics for both switching and amplification functions. The transistor features excellent high-frequency response and linear gain characteristics throughout its operating range. Its optimized geometry minimizes parasitic elements that can affect circuit stability. The ZX3CD1S1M832TA demonstrates remarkable thermal stability, maintaining performance across environmental conditions. Design applications range from small-signal preamplifiers to power driver stages in various electronic systems. Telecommunications infrastructure, automotive control modules, and industrial sensors frequently incorporate this versatile component. Diodes Incorporated produces the ZX3CD1S1M832TA using advanced wafer fabrication and assembly techniques. The transistor's packaging options include both through-hole and surface-mount variants for design flexibility. With its proven reliability and technical specifications, the ZX3CD1S1M832TA stands out in competitive BJT offerings. To discuss customization options or request samples, complete our convenient online contact form for prompt assistance from our technical sales team.

General specs

  • Product Status: Active
  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -

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